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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES Including two devices in TS6. (Thin Super Mini type with 6 pin) Simplify circuit design. G A F K 1 KTX111T EPITAXIAL PLANAR NPN/PNP TRANSISTOR E B K 6 Reduce a quantity of parts and manufacturing process. 2 5 DIM A B C D E D F G H I J 3 4 MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 J Marking Q1 Q2 h FE Rank Type Name 6 5 4 Lot No. B 1 2 3 1. 2. 3. 4. 5. 6. Q1 Q1 Q2 Q2 Q2 Q1 EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR 1 2 3 Q1 MAXIMUM RATINGS (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current ) SYMBOL VCBO VCEO VEBO IC IE RATING 35 30 5 500 -500 UNIT V V V Q2 MAXIMUM RATINGS (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current ) SYMBOL VCBO VCEO VEBO IC IE RATING -35 -30 -5 -500 500 UNIT V V V Q1, Q2 MAXIMUM RATINGS (Ta=25 CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range * Package mounted on a ceramic board (600 ) SYMBOL PC * Tj Tstg 0.8 ) RATING 0.9 150 -55 150 UNIT W 2002. 1. 24 Revision No : 1 I 6 5 4 L EQUIVALENT CIRCUIT (TOP VIEW) G K L J H C TS6 1/4 KTX111T Q1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance SYMBOL ICBO IEBO hFE(1) (Note) hFE(2) (Note) VCE(SAT) VBE fT Cob ) TEST CONDITION VCB=35V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100 VCE=6V, IC=400 IC=100 , IB=10 VCE=1V, IC=100 VCE=6V, IC=20 VCB=6V, IE=0, f=1 MIN. 70 25 TYP. 0.1 0.8 300 7.0 MAX. 0.1 0.1 240 0.25 1.0 V V UNIT. Note) hFE(1) Classification O:70~140, Y:120~240. hFE(2) Classification O:25(Min), Y:40(Min). Q2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance SYMBOL ICBO IEBO ) TEST CONDITION VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100 VCE=-6V, IC=-400 IC=-100 , IB=-10 VCE=-1V, IC=-100 VCE=-6V, IC=-20 VCB=-6V, IE=0, f=1 MIN. 70 25 TYP. -0.1 -0.8 200 13 MAX. -0.1 -0.1 240 -0.25 -1.0 V V UNIT. hFE(1) (Note) hFE(2) (Note) VCE(SAT) VBE fT Cob Note) hFE(1) Classification O:70~140, Y:120~240. hFE(2) Classification O:25(Min), Y:40(Min). 2002. 1. 24 Revision No : 1 2/4 KTX111T Q 1 (NPN TRANSISOR) I C - VCE 500 COLLECTOR CURRENT I C (mA) 400 300 200 100 0 COMMON EMITTER Ta=25 C 6.0 4.0 3.0 2.0 h FE - I C 500 DC CURRENT GAIN h FE 300 Ta=100 C VCE =6V 100 50 30 Ta=-25 C Ta=25 C VCE =1V COMMON EMITTER 1.0 0.5 I B =0.1mA 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) 10 0.5 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) I B - VBE COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 2k 1k BASE CURRENT I B (A) 500 300 C C Ta= 100 25 C VCE(sat) - I C 1 0.5 0.3 COMMON EMITTER I C /I B =10 COMMON EMITTER VCE =6V Ta= 50 30 10 5 0 0.2 0.4 Ta= 100 -25 0.1 0.05 0.03 Ta=100 C Ta=25 C Ta=-25 C 0.6 0.8 1.0 0.01 0.5 1 3 10 30 100 300 1K BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (mA) Q 2 (PNP TRANSISOR) I C - VCE -600 COLLECTOR CURRENT I C (mA) -500 -400 -300 -200 -100 0 0 -1 -2 -3 0 -8 -7 -6 -5 COMMON EMITTER Ta=25 C -4 -3 -2 I B =-1mA h FE - I C 1k 500 DC CURRENT GAIN h FE 300 Ta=100 C Ta=25 C VCE =-6V COMMON EMITTER 100 50 30 Ta=-25 C VCE =-1V -4 -5 10 -0.3 -1 -3 -10 -30 -100 -300 -1k COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) 2002. 1. 24 Revision No : 1 3/4 KTX111T V CE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.5 -1 -3 -10 -30 -100 -300 -1k Ta=100 C Ta=25 C Ta=-25 C COMMON EMITTER I C /I B =10 I B - VBE -3k -1k BASE CURRENT I B (A) -300 -100 -30 -10 -3 -1 -0.3 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 COMMON EMITTER VCE =-6V Ta=1 00 C Ta=2 5C Ta=25 C COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE VBE (V) Pc - Ta COLLECTOR POWER DISSIPATION PC (W) 1.2 MOUNTED ON A 1.0 0.8 0.6 0.4 0.2 0 CERAMIC BOARD (600mm 2 0.8mm) 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 2002. 1. 24 Revision No : 1 4/4 |
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